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March 2003
AOP604 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses.
Features
n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28m < 35m (VGS = 10V) < 43m < 58m (VGS = 4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A
PDIP-8
S1/A G1 S2 G2 1 2 3 4 8 7 6 5 D1/K D1/K D2 D2
D2
D1 K
N-ch P-ch
G2 S2 G1 S1 A
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -30 20 -6.6 -5.3 -30 2.5 1.6 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG Symbol VDS TA=25C ID IDM PD TJ, TSTG
7.5 6 30 2.5 1.6 -55 to 150
W C Units V A
Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A
Maximum Schottky 30 4 2.7 20 2.5 1.6 -55 to 150
TA=70C Pulsed Forward Current B TA=25C Power Dissipation
A
TA=70C
W C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
AOP604
Thermal Characteristics: n-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics: p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol RJA RJL
Typ 40 67 33
Max 50 80 40
Units C/W C/W C/W
Symbol RJA RJL
Typ 38 66 30
Max 50 80 40
Units C/W C/W C/W
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 42 70 34
Max 50 80 40
Units C/W C/W C/W
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating.
Alpha Omega Semiconductor, Ltd.
AOP604
n-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance VDS=5V, ID=7.5A 12 Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.5A TJ=125C 33 16 0.45 0.5 4 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V Schottky+ Body Diode Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current A pF pF pF nC nC nC nC ns ns ns ns ns nC 0.5 0.05 10 20 pF mA V
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. (Schottky+FET) Coss Crss Rg Reverse Transfer Capacitance Gate resistance
680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/s IF=7.5A, dI/dt=100A/s IF=1.0A VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VR=15V
2
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge
4.1 20.6 5.2 16.5 7.8 0.45 0.007 3.2 12 37
SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT Maximum reverse leakage current Junction Capacitance
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating.
Alpha Omega Semiconductor, Ltd.
AOP604
p-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.2 30 28 37 44 13 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.5 VGS=-10V, VDS=-15V, ID=-6.6A 9.6 2.7 4.5 7.7 VGS=-10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.6A, dI/dt=100A/s 5.7 20.2 9.5 20 8.8 35 45 58 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30 10V 25 20 ID (A) 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V ID(A) 6V 5V 4.5V
20 16 12 8 125C 4 25C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics VDS=5V
4V
60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7.5A VGS=10V
VGS=10V
70 60 RDS(ON) (m) 50 40 30 20 125C ID=7.5A IS Amps
1.0E+01
1.0E+00 125C 1.0E-01
25C
1.0E-02
25C
1.0E-03 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics MOSFET+Schottky
Alpha & Omega Semiconductor, Ltd.
AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=7.5A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss(FET+Schottky) Ciss f=1MHz VGS=0V
VDS (Volts) Figure 8: Capacitance Characteristics
100 RDS(ON) limited
TJ(Max)=150C TA=25C 1ms 10ms 0.1s 100s 10s Power W
40 TJ(Max)=150C TA=25C
30
10 ID (Amps)
20
1
1s 10s DC
10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 100 1000
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOP604
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 65 60 55 RDS(ON) (m) 50 45 40 35 30 25 20 3 -VGS (Volts) 4 5 6 7 8 9 10 Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C ID=-6.6A 1.0E+01 1.0E+00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V VGS=-4.5V Normalized On-Resistance 55 1.60 ID=-6.6A 1.40 VGS=-10V VGS=-4.5V 1.20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 30 25 -4V -ID(A) 20 15 10 5 125C 25C VDS=-5V
1.00
Alpha & Omega Semiconductor, Ltd.
AOP604
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-6.6A Capacitance (pF) 1250 1000 750 500 Coss 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss
Ciss
100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC
40
TJ(Max)=150C TA=25C
Power (W)
-ID (Amps)
10.0
30
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOP604 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10 125C Capacitance (pF) 250 f = 1MHz 1 IF (Amps) 200 150 100 50 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 VF (Volts) Figure 12: Schottky Forward Characteristics VKA (Volts) Figure 13: Schottky Capacitance Characteristics
0.1
0.01 25C 0.001
0.7 0.6 0.5 VF (Volts) 0.4 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 IF=3A
100 10 1 VR=30V 0.1 0.01 0.001 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature
IF=1A
Figure 14: Schottky Forward Drop vs. Junction Temperature 10 Z JA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff ) TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Leakage Current (mA)
0.1
PD Ton Single Pulse
Toff
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
PDIP-8 (300) Package Data
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
NOTE: LG PARTN F A Y W LN
- AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE
PDIP-8 PART NO. CODE
PART NO. AOP604
CODE P604
PART NO.
CODE
PART NO.
CODE
ALPHA & OMEGA
SEMICONDUCTOR, INC.
PDIP-8 (300) Tube Data
PDIP-8 Tube

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